Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

摘要

The Hanle-type spin precession method was carried out associated withnon-local magnetoresistance measurement using a highly doped (5\times10^19)silicon channel. The spin diffusion length obtained by the Hanle-method is ingood agreement with that by the gap dependence of non-local signals. We haveevaluated the interface and bulk channel effects separately, and it wasdemonstrated that the major source of temperature dependence of non-localsignals originates from the spin polarization reduction at interface betweenthe tunnel barrier and silicon.